| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon oxide film which is formed at nearly an ordinary temperature, does not contain fluorine, has a good transparency and has a high water repellency. SOLUTION: This film is formed by building up a reaction product, which is prepared using a low temperature plasma using an organosilicon compound gas, on the surface of a substrate, mainly comprises silicon oxide and has a surface form wherein the maximum level difference of irregularity is within the range of 50 to 330 nm and the value of the average-square surface roughness is within the range of 8 to 45 nm The organosilicon compound is an organosilane which is free of fluorine, and the organosilane is preferably at least one of tetramethylsilane, trimethylmethoxysilane, dimethyldimethoxysilane, hexamethyldisilane or hexamethyldisiloxane. |
