| 摘要 |
PROBLEM TO BE SOLVED: To prevent a metallic thin film from coming off, to stably form a pattern with excellent reproductivity and to improve an yield for producing a mask by permitting the cross section of a very small opening pattern to be inclined in the normal direction of a mask surface. SOLUTION: Si3 N4 films 402 and 403 are respectively formed on the front surface and rear surface of an Si substrate 401 and a Cr thin film 404 is formed on the front surface Si3 N4 film 402 as a very small opening pattern forming metallic thin film. The tip of a probe 407 is brought into contact on the front surface of the film 404 and an AFM cantilever 406 is bent till the probe is pushed in (b). The probe 407 is scanned in an xy direction, the film 404 is cut and worked and a very small opening pattern 408 is formed (c). The pattern 408 has the structure having inclination in the normal direction of the mask surface in its cross section. At least, a window for etching is formed on the film 403 on the rear surface (d), anisotropic etching is executed on the substrate 401 and a thin film-shaped mask 409 is formed (e). |
