| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a light-emitting element having high luminous intensity, and at the same time, to relatively easily form a high quality flat nitride semiconductor layer, which is completely crystallized in a single crystal and has an extremely small number of crystal defects. SOLUTION: A hetero-epitaxial layer (silicon nitride layer) 12 which contains crystalline silicon nitride, amorphous silicon nitride, or silicon nitride in which amorphous and crystalline silicon nitrides are mixed and containing single crystals is formed on a single-crystal silicon substrate 11 to a thickness of 0.05-2,000 nm. Then a nitride semiconductor layer 13, such as gallium nitride layer, etc., is formed on the silicon nitride layer 12. |
