| 发明名称 |
Epitaxial layer on a heterointerface |
| 摘要 |
Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs (110) on silicon (102) is accomplished by formation of a defect annihilating grid (104) on the silicon (102) prior to the epitaxy of the GaAs (110).
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| 申请公布号 |
US5959308(A) |
申请公布日期 |
1999.09.28 |
| 申请号 |
US19930012781 |
申请日期 |
1993.01.29 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SHICHIJO, HISASHI;MATYI, RICHARD J. |
| 分类号 |
H01L21/20;H01L21/36;(IPC1-7):H01L29/06;H01L31/032;H01L31/033;H01L31/072 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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