发明名称 Compounds and infrared devices including stoichiometric semiconductor compounds of indium, thallium, and including at least one of arsenic and phosphorus
摘要 A semiconductor layer of In1-xTlxQ carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As1-yPy and 0<x<1, 0<y<1.
申请公布号 USRE36315(E) 申请公布日期 1999.09.28
申请号 US19970839835 申请日期 1997.04.17
申请人 S.R.I. INTERNATIONAL 发明人 CHEN, AN-BAN;SHER, ARDEN;VAN SCHILFGAARDE, MARK
分类号 H01L27/146;H01L29/201;H01L31/0264;H01L31/0304;H01L31/10;H01L33/30;(IPC1-7):H01L29/205 主分类号 H01L27/146
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