发明名称 |
Compounds and infrared devices including stoichiometric semiconductor compounds of indium, thallium, and including at least one of arsenic and phosphorus |
摘要 |
A semiconductor layer of In1-xTlxQ carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As1-yPy and 0<x<1, 0<y<1.
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申请公布号 |
USRE36315(E) |
申请公布日期 |
1999.09.28 |
申请号 |
US19970839835 |
申请日期 |
1997.04.17 |
申请人 |
S.R.I. INTERNATIONAL |
发明人 |
CHEN, AN-BAN;SHER, ARDEN;VAN SCHILFGAARDE, MARK |
分类号 |
H01L27/146;H01L29/201;H01L31/0264;H01L31/0304;H01L31/10;H01L33/30;(IPC1-7):H01L29/205 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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