MANUFACTURE OF TRENCH-TYPE CAPACITOR BY USE OF THROWAWAY HARD MASK

摘要

PROBLEM TO BE SOLVED: To enable capacitors and the like to be arranged on a chip in closer disposition to each other, by a method wherein a trench is provided to a semiconductor substrate by anisotropic etching penetrating through other layers laminated between a photoresist layer and the semiconductor substrate. SOLUTION: A substrate 1 with a patterned photoresist layer is anisotropically etched, and a part of layers under the exposed photoresist pattern is selectively removed including a part of the semiconductor substrate 1 to form a required trench. After etching is finished, a residual BSG layer 40 is removed. The BSG layer 40 can be highly selectively removed to the substrate 1 and dielectric layers 10 and 20. Usually, the surface of the dielectric layer is left nearly flat through a BGS removal process. The substrate 1 with a trench is subjected to various well-known manufacturing techniques, whereby component elements on the basis of a trench or other devices which form a required integrated circuit can be manufactured.