发明名称 Lithographic proximity correction through subset feature modification
摘要 Lithographic Proximity Correction (LPC) shapes are added (503) to a layer of a layout database file (501). Geometric criteria such as feature width are then used to filter the added LPC shapes (502). The LPC shapes are then modified (505) by determining which LPC shapes are within a predetermined distance from a shape in a layer of the second data base (504). The database file, including the modified LPC shapes, is then used to manufacture a set of lithographic masks (506). The lithographic masks are then used to pattern a set of wafers in the manufacture of integrated circuits (507).
申请公布号 US5958635(A) 申请公布日期 1999.09.28
申请号 US19970954160 申请日期 1997.10.20
申请人 MOTOROLA, INC. 发明人 REICH, ALFRED JOHN;CHUANG, HAK-LAY;KLING, MICHAEL E.;TSUI, PAUL G. Y.;LUCAS, KEVIN;CONNER, JAMES N.
分类号 G03F1/14;G03F7/20;(IPC1-7):G03F9/00 主分类号 G03F1/14
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