发明名称 Method for forming oxide film on III-V substrate
摘要 A method is provided for forming an oxide film on a III-V substrate. The method includes steps of (a) preparing an acidic solution containing a IIIA-ion, (b) adding an basic solution into the acidic solution to provide a growth solution of a specific pH value, and (c) placing the III-V substrate into the growth solution to form the oxide film on the III-V substrate.
申请公布号 US5958519(A) 申请公布日期 1999.09.28
申请号 US19970929639 申请日期 1997.09.15
申请人 NATIONAL SCIENCE COUNCIL 发明人 WANG, HWEI-HENG;WANG, YEONG-HER;HOUNG, MAU-PHON
分类号 H01L21/316;(IPC1-7):B05D1/18 主分类号 H01L21/316
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