发明名称 |
Method for forming oxide film on III-V substrate |
摘要 |
A method is provided for forming an oxide film on a III-V substrate. The method includes steps of (a) preparing an acidic solution containing a IIIA-ion, (b) adding an basic solution into the acidic solution to provide a growth solution of a specific pH value, and (c) placing the III-V substrate into the growth solution to form the oxide film on the III-V substrate.
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申请公布号 |
US5958519(A) |
申请公布日期 |
1999.09.28 |
申请号 |
US19970929639 |
申请日期 |
1997.09.15 |
申请人 |
NATIONAL SCIENCE COUNCIL |
发明人 |
WANG, HWEI-HENG;WANG, YEONG-HER;HOUNG, MAU-PHON |
分类号 |
H01L21/316;(IPC1-7):B05D1/18 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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