发明名称 Method and structure for contacting an overlying electrode for a magnetoelectronics element
摘要 A method for contacting an electrically conductive electrode overlying a first dielectric material of a structure is provided. The method includes forming a mask layer overlying the electrically conductive electrode and patterning the mask layer to form an exposed electrically conductive electrode material. At least a portion of the exposed electrically conductive electrode material is removed while an electrically conductive veil is formed adjacent the mask layer. A metal contact layer is formed such that said metal contact layer contacts the electrically conductive veil.
申请公布号 US6806127(B2) 申请公布日期 2004.10.19
申请号 US20020309514 申请日期 2002.12.03
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 BUTCHER BRIAN R.;SMITH KENNETH H.;TRACY CLARENCE J.
分类号 H01L21/336;H01L21/8234;H01L27/22;H01L29/94;H01L43/12;(IPC1-7):H01L21/336;H01L21/823 主分类号 H01L21/336
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