发明名称 |
Method and structure for contacting an overlying electrode for a magnetoelectronics element |
摘要 |
A method for contacting an electrically conductive electrode overlying a first dielectric material of a structure is provided. The method includes forming a mask layer overlying the electrically conductive electrode and patterning the mask layer to form an exposed electrically conductive electrode material. At least a portion of the exposed electrically conductive electrode material is removed while an electrically conductive veil is formed adjacent the mask layer. A metal contact layer is formed such that said metal contact layer contacts the electrically conductive veil.
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申请公布号 |
US6806127(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20020309514 |
申请日期 |
2002.12.03 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
BUTCHER BRIAN R.;SMITH KENNETH H.;TRACY CLARENCE J. |
分类号 |
H01L21/336;H01L21/8234;H01L27/22;H01L29/94;H01L43/12;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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