| 摘要 |
A silicon semiconductor device has at least one contact plug of chemical-vapor-deposited aluminum to a lower-level titanium contact provided with a titanium nitride layer that is a barrier both to the migration of aluminum and to the migration of silicon layer, but is treated so as to be smooth and titanium-rich on the surface thereof on which aluminum is chemical-vapor-deposited, so the chemical-vapor-deposited aluminum in the contact plug is homogeneously grown and free of voids therein. The silicon semiconductor device may additionally include trenches for buried aluminium wiring in the same insulating layer through which the contact hole for each contact plug extends. The preferred methods of manufacturing the device include electron-cyclotron-resonance etching, to smooth the surface of the side walls and bottoms of each contact hole and buried-aluminium-wiring trench, and to render the exposed surface titanium nitride layer titanium-rich.
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