| 摘要 |
PROBLEM TO BE SOLVED: To enable the stably even irregularities to be formed on the surface of a polycrystalline silicon electrode. SOLUTION: The first polycrystalline silicon film 3A and almost non- insulating thin silicon oxide film 4 and the second polycrystalline silicon film 3B are formed on a silicon substrate 1 through the intermediary a silicon oxide film 2 and then thermal oxide films 6 are formed on the surface thereof. Next, this thermal oxide films 6 are etched away to expose the surface of grain parts 5A and then the second polycrystalline silicon film 3B, the silicon oxide film 4 and the first polycrystalline silicon film 3A are patterned. Finally, the second polycrystalline silicon film 3B are etched away using the thermal oxide films 6 left on the grain boundary part as masks. |
