| 摘要 |
PURPOSE:To provide a method of forming not only a resist pattern stably and excellently on an optional ground board using a light beam of optional single wavelength as an exposure light source even if the resist pattern is fine but also a new antireflection film. CONSTITUTION:An antireflection film ARL formed of silicon carbide film (SixCy) is formed on a ground substrate S direct or through the intermediary of some layer. A photoresist PR is formed on the antireflection film ARL direct or through the intermediary of some layer. The photoresist PR is subjected to light exposure, whereby a mask pattern is transferred onto the photoresist PR. It is preferable that an antireflection film which is 1.2 to 3.4 in reflection refractive index n and 0.16 to 0.72 in absorption refractive index k to an exposure light beam of wavelength 150 to 450nm and 10 to 100nm in thickness is used. |
