| 摘要 |
Semiconductor devices and methods of surface treatment of semiconductor devices are disclosed. Roughness (6) is formed on the surface of a III - V group compound semiconductor to prevent total reflection, and a SiNx film (7) is formed on the rough surface (6). The surface roughness makes it possible to increase external quantum efficiency, and bond strength is increased because the SiNx film (7) is formed on the surface roughness. As a result, detachment of SiNx film (6) is prevented, moisture resistant properties are improved, and the service life of the LED incorporating the semiconductor is extended by preventing oxidation. |
