发明名称
摘要 The present invention provides antifuses that enhance the efficiency of a field programmable gate array and that decrease chip size. The antifuses comprise a plurality of first conductive layers formed on a substrate, an antifuse layer formed on a plurality of the first conductive layers, and a second conductive layer formed on the antifuse layer. A method of fabricating the antifuses comprises the steps of forming a plurality of first conductive layers on predetermined portions of a substrate, forming an insulating layer over the surface of the substrate, selectively etching the insulating layer to form a via hole that is connected with a plurality of the first conductive layers, forming an antifuse layer on a predetermined portion of the insulating layer, including the via hole, and forming a second conductive layer on a predetermined portion of the insulating layer, including the antifuse layer.
申请公布号 JP2952581(B2) 申请公布日期 1999.09.27
申请号 JP19980025562 申请日期 1998.02.06
申请人 ERU JII SEMIKON CO LTD 发明人 DON MAN KAN;JON HO KAN
分类号 H01L23/52;H01L21/3205;H01L21/82;H01L23/525;(IPC1-7):H01L21/82 主分类号 H01L23/52
代理机构 代理人
主权项
地址