| 摘要 |
<p>PURPOSE: To provide a thin film semiconductor device which is provided with a photosensor having a little variation of the light sensitivity and is less in leak current. CONSTITUTION: After a first electrode layer 32 is deposited on a glass substrate 31, a sensor element is covered by successively depositing a gate insulating layer 33, a semiconductor layer 34, and a channel protective layer 38 on the layer 32. Then an impurity semiconductor layer 35 is deposited and the layers 34 and 33 are patterned by etching the layers 34 and 33 by using the same mask so as to expose the layer 32 and substrate 31. Thereafter, an electrode layer 35 is deposited and a source, a drain, capacitor electrodes, and wiring are formed. Then the layers 35 and 34 are etched off and, finally, a protective insulating layer 37 is deposited on the entire surface of the substrate 31.</p> |
