| 摘要 |
A semiconductor device includes a transistor element having a gate electrode, a source.drain region and a channel region, a first interlayer insulator formed on the transistor element, a second interlayer insulator formed on the first interlayer insulator, an interconnecting line formed on the second interlayer insulator, a conductive material filling layer formed by burying a conductive material in a first hole which is formed in the first interlayer insulator on the source.drain region, and a contact plug formed in a second hole which is formed in the second interlayer insulator. This semiconductor device has a low sheet resistance, can perform high-speed operation and increase the degree of integration, has high reliability, and does not largely increase the number of fabrication steps. A method of fabricating the semiconductor device is also provided. |
