摘要 |
The present invention relates to the fabrication of integrated circuit devices, and more particularly, to a method of etching inorganic antireflective layers without etching excessive amounts of an underlying oxide. According to one aspect of the present invention, the antireflective layer is selectively etched using an etchant which comprises about 35-40 wt. % NH4F and about 0.9-5.0 wt. % H3PO4 in an aqueous solution. |