发明名称
摘要 PROBLEM TO BE SOLVED: To make electron density of plasma on a wafer surface of large area by exciting resonance conductors of specified lengths arranged by an even number symmetrically toward a center from an outer conductor of a cylindrical pipe connected with a plasma chamber by impression of high frequency power. SOLUTION: Bar-shaped resonance conductors of an even number which are symmetrically provided in a radial direction from a cylindrical outer conductor 2 have about 1/4 wavelength of a high frequency to be used. By an action of electromagnetic field generated by resonance current flowing in adjacent resonance conductors 3 which resonate each other, induction current is flowed in the adjacent resonance conductors 3 and the directions 6 of current in the adjacent resonance conductors 3 become opposite. In space 4 between the resonance conductors 3, magnetic field which is alternately generated in opposite directions is added and becomes strong. High frequency power to the resonance conductors 3 is impressed, gas for plasma is introduced into lower plasma generation space which is isolated from the cylindrical outer conductor 2 by an insulating plate for vacuum seal and plasma is generated. To closely couple with strong magnetic field, plasma becomes easy in excitation and the electron density becomes uniformly high.
申请公布号 JP2954168(B1) 申请公布日期 1999.09.27
申请号 JP19980157357 申请日期 1998.06.05
申请人 发明人
分类号 H05H1/30;C23C14/22;H01L21/3065;H05H1/46 主分类号 H05H1/30
代理机构 代理人
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