发明名称 |
Method of fabricating a capacitor on a rugged stacked oxide layer |
摘要 |
The present invention relates to a stacked memory capacitor of a DRAM cell, particularly, relates to a DRAM cell having a memory capacitor whose storage electrode possesses a remarkably increase area without increasing its occupation area and the complexity of fabrication thereof. By disposing the storage electrode of the memory capacitor on a rugged stacked oxide layer, the area of the storage electrode is remarkably enlarged since the growing of the storage electrode made of a doped polysilicon layer is followed along the topography of the rugged stacked oxide layer, thereby, resulting in a rugged surface thereof. The entire rugged surface of the storage electrode is covered with a dielectric layer to form a plate electrode made of a doped polysilicon layer. The memory capacitor provided by the invention achieves a higher capacitance while maintaining the same occupation area and packing density as that of the conventional arts.
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申请公布号 |
US5960279(A) |
申请公布日期 |
1999.09.28 |
申请号 |
US19960697622 |
申请日期 |
1996.08.27 |
申请人 |
MOSEL VITELLIC INCORPORATED |
发明人 |
CHEN, KUANG-CHAO;TU, TUBY |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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