HIGH DENSITY AND HIGH CURRENT DRIVABILITY PHASE CHANGE MEMORY CELL ARRAY AND HIGH SPEED LOW POWER CONSUMPTION SEMICONDUCTOR DEVICES COMPRISING THE SAME
摘要
申请公布号
KR20060034398(A)
申请公布日期
2006.04.24
申请号
KR20040083406
申请日期
2004.10.19
申请人
BEYONDMICRO INC.
发明人
MO, JU HO;CHU, EU GENE;PARK, SEONG TAEK;LIM, HYUN YONG;JEONG, JA CHOON;SO, JAE KANG