NEGATIVE RESIST COMPOSITION

摘要

PROBLEM TO BE SOLVED: To obtain the negative resist composition suitable for use of light from a <=220 nm exposure light source, especially, ArF excimer laser beams (193 nm) by incorporating specified compounds and resin. SOLUTION: This negative resist composition contains the compound to be allowed to produce an acid by irradiation with activated rays or radiation and the resin having polycyclic alicyclic group and a hydroxyl group and at least one kind of cyclic imido compound represented by the formula in which A is a divalent alkylene group or the like optionally having a hetero atom; B is an optionally substituted trivalent alkylene group or the like; Z1 is an H atom or the like; Z2 is an optionally substituted (m+1)-valent alkylene group or the like; Z3 is an optionally substituted n-valent alkylene group or the like; (m) is an integer of >=1; and (n) is an integer of >=2. The resin having polycylic alicyclic groups and a hydroxyl group has a >=5 C bicyclo group or the like as the polycyclic alicyclic group.