| 摘要 |
PROBLEM TO BE SOLVED: To simplify the manufacturing process by a means such that a part of a semiconductor laminate frequency forms an optical guide, a part of which forms a mixed crystal part of an intermediate compsn. by the mutual fusion of semiconductor films. SOLUTION: On the top face of a substrate 1 an n-type AlGaInP clad layer 22, active layer 23, p-type AlGaInP clad layer 24, etching stop layer 25 and p-type AlGaInP clad layer 42 are formed to constitute a semiconductor laminate film onto the surface of which a laser beam is irradiated to locally heat and melt the semiconductor laminate film, thereby cousing it to change into an intermediate compsn. to form a mixed crystal part 9. The active layer 23 of the semiconductor laminate film forms an optical guide, and the mixed crystal part 9 is formed across a part of the optical guide. By forming the mixed crystal part 9 the loss due to the light absorption is avoided to prolong the life of a semiconductor element. The mixed crystal part 9 can be formed with only the irradiation of a laser beam, and the manufacturing cost can be reduced. |
