| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of a sharp step in an insulation film below a connection surface (base electrode pad part) between a base electrode and a wiring and the generation of sharp step difference in a base electrode formed thereon in a semiconductor device with a heterojunction bipolar transistor. SOLUTION: This semiconductor device has a semiconductor board 1, a sub-collector layer 2 formed on the board 1, a collector layer 3, a base layer 4, a emitter layer 5, a collector electrode 18 and an emitter electrode electrically connected to the collector layer 3 and the emitter layer 5, respectively and an Si insulator covering at least a part of a step formed of the sub-collector layer 2, the collector layer 3 and the base layer 4 and a base electrode which extends on a Si insulator and is electrically connected to the base layer 4. The device is provided with a heterojunction bipolar transistor in which a part for which the base electrode 14 extends in a side surface of an end part at the side of the base layer 4 of the Si insulator tilts at an angle lower than or equal to 70 deg. with respect to the surface of the base layer 4. |
