| 摘要 |
<p>PROBLEM TO BE SOLVED: To keep a silicon carbide semiconductor device high in carrier mobility even if a channel region is formed by implantation of ions. SOLUTION: A silicon oxide film 30 is formed on the surface of an N<-> -type silicon carbide epitaxial layer 2 which includes P<-> -type silicon carbide base regions 3a and 3b. Thereafter, P-type impurities contained in the surface of the P<-> -type silicon carbide base regions 3a and 3b are externally diffused into the silicon oxide film 30. By this setup, the surfaces of the P<-> -type silicon carbide base regions 3a and 3b are decreased in P-type impurities. Ions are implanted into the P-type silicon carbide base regions 3a and 3b, whereby a surface channel layer 5a is formed. By this setup, neutral impurities formed by compensating P-type impurities can be lessened in amount, and a semiconductor device of this constitution can be improved in carrier mobility.</p> |
