TRANSISTOR, TRANSISTOR ARRAY, MANUFACTURE OF TRANSISTOR ARRAY AND NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To obtain a transistor, a transistor array and the manufacturing method of the transistor array, which can perform high-speed operation and can achieve hign integration, and a non-volatile semiconductor memory. SOLUTION: On the surface of a silicon substrate 1, a plurality of source/ drain regions 2 are formed at the specified interval. On the side of one source/ drain region 2 and the side of the other source/drain region 2 on a channel region 4, floating-gate electrodes 6a and 6b are formed through a first insulating film 5, respectively. Protruding parts 60 are formed respectively at the peripheral parts of the floating gate electrodes 6a and 6b. A control gate electrode 8 is formed on the floating gate electrodes 6a and 6b through a second insulating film 7 from the channel region 4. The control gate 8 is in contact with the floating gate electrodes 6a and 6b respectively through the second insulating film 7 at one surface.