| 摘要 |
PROBLEM TO BE SOLVED: To lessen the area of a capacitance element itself, which is embedded in an integrated circuit, and also to contrive to lessen the area of the peripheral part, required for forming the element. SOLUTION: This semiconductor device has a structure, in which an insulative protruding part 21 is formed on a region to be formed with capacitance element 15 and a lower electrode 12, a capacitor insulating film 13 and an upper electrode 14 of the element 15 are provided on the region in such a way as to cover this protruding part 21, and the device is formed into a constitution, wherein the film 13 is formed up to on the sidewall of the part 21, whereby the apparent area of the element can be increased without augmenting the planer area of the element. |
