| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable oxide film forming method of a semiconductor element, which improves a time dependent deelectric break down (TDDB) characteristic and prevents the diffusion of boron ions. SOLUTION: This oxide film forming method of a semiconductor element is provided with a process for forming an insulating film on a semiconductor substrate 11, a process for masking a prescribed section of the insulating film, and implanting nitrogen and fluorine ions to the semiconductor substrate 11 via an exposure part which is not masked in the insulating film, a process for removing the insulating film and a process for forming first and second oxide films 15 and 16 which mutually differ in thickness on the semiconductor substrate 11 of an ion implanting region and an ion non-implanting region. |
