| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser, realizing good temperature characteristic by improving quantum well effect, along with a structure of high reliability by restraining lattice nonconformities. SOLUTION: A semiconductor laser is provided with a GaAS substrate 2, and an active layer 8 with a superlattice structure made up of a well layer 8b between barrier layers 8a and 8c. In this case, the well layer 8b is made of Ga1-x Inx Ny As1-y , the barrier layers 8a and 8b are made of Ga1-i Ini As1-j Pj or GaAs1-j Pj , and at least one or more pairs of well layers 8b and barrier layers 8a and 8c are laminated. Even if the composition ratio of x of In of the well layer 8b is made small, the confinement effect of electrons and holes in a conduction band or valence electron band of the quantum well is adequately obtained, and temperature characteristics are improved. In addition, by making the composition ratio of x of In small, the lattice nonconformities are reduced, and stress distortions from the GaAs substrate 2 is suppressed, and reliability is improved. |
