| 摘要 |
PROBLEM TO BE SOLVED: To restrain generation of defect and realize stability even to heat and electron irradiation even if a mask is made extremely thin, by providing chemical structure which is different from other parts to a surface layer of a mask which selectively forms solid body only in a regulated region on a base and restrains growth of a solid body except a regulated region. SOLUTION: An optimum material is used for a surface layer for selectivity of formation and material which improves characteristics of stability, etc., of an entire of a mask is used for part except a surface layer. It is formed as a thin film in a surface of a base and has a structure consisting of at least two layers. The material used for a surface layer can be anything only if it restrains growth on a mask in selective growth reaction of a solid body and a layer except a surface layer can be anything only if it satisfies stability to heat, electron beam and excitation of plasma, etc., and structural defect restraint or stability, adhesion, etc., of an interface with a base. A structure wherein a silicon dioxide layer is provided on a silicon nitride layer is a mask which is applicable to wide selective growth. |
