| 摘要 |
PROBLEM TO BE SOLVED: To restrict local concentration of a metal promoting crystallization of silicon, by a method wherein laser beams are irradiated after a heating process and a region which has specified spin density and is deemed to be a monocrystal in which a grain boundary does not exist substantially is formed. SOLUTION: First, after a nitrogen oxide silicon film 102 is formed as an underlayer on a glass substrate 101, an amorphous silicon film 103 to be a crystalline silicon film is formed. Next, a nickel acetate solution containing a nickel element is coated on a surface of the amorphous silicon film 103. Heating is performed and the amorphous silicon film 103 is crystallized. This heating process is made in the atmosphere containing a halogen element. After the crystalline silicon film is obtained, the reheating process is made in a solution containing halogen at a higher temperature than before. Still further, laser beams are irradiated after the second heating, and a region which has specified spin density of 3×10<17> cm<-3> and is deemed to be a monocrystal in which a grain boundary does not exist substantially is formed.
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