| 摘要 |
PROBLEM TO BE SOLVED: To improve the uniformity of a process and the flatness and to thereby prevent damaging phenomenon from occurring at active pattern regions by providing a mask pattern with the active pattern regions and a plurality of dummy active pattern regions from which portions corresponding to gate pattern forming regions are removed. SOLUTION: The width of an active pattern region 21 in a cell region is made narrow, and the width of an active pattern region 21 in a peripheral region is made wide. Then, a plurality of dummy active pattern regions 30, which are separated not only from the regions 21 at predetermined intervals but also from one another, are formed in separation regions 22 which extend between the regions 21 in such a manner that the regions 30 surround each corresponding region 21 in the form of a plurality of rectangular frames. The width of each region 30 is made wider than or equal to the minimum width of the region 21. Further, the width of a gate line pattern region is made wider or equal to the minimum width of any region 22.
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