| 摘要 |
<p>PROBLEM TO BE SOLVED: To make usable a device utilizing the degrees of freedom for spinning of charge curriers as an element for logic by making large output signals available from the device. SOLUTION: An LaSrMnO3 source region 402 and an LaSrMnO3 drain region 403 having single magnetic domains are formed on an SrTiO3 substrate 401 and an LaSrMnO3 intermediate region 405 having a single magnetic domain is formed between the source and drain regions 402 and 403 via a tunnel barrier 404. The spinning directions of charge carriers coincide with each other in the source and drain regions 402 and 403, and in an initial state (state in which no external magnetic field is impressed), the spinning direction of charged carriers in the intermediate region 405 is made opposite to those of the charged carriers in the source and drain regions 402 and 403. In the intermediate region 405, a current line 409 for controlling the external magnetic field is formed via an SiO2 films 406 for controlling the spinning direction of the charge carriers in the intermediate region 405. Although in the state shown in the figure, the connection between the source and drain regions 402 and 403 is in an 'off' state, but if the spinning direction of charged carriers in the intermediate region 405 is inverted by means of the current flowing through the current line 409, the connection becomes an 'on' state.</p> |
