SELF TEST AND CORRECTION OF CHARGE LOSS ERROR IN SECTOR ERASABLE AND PROGRAMMABLE FLASH MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a method for self-testing and correcting an error caused by the charge loss of a flash memory. SOLUTION: Read and parity check are repeated sequentially per byte and integrity is verified for values stored in respective parity bits of a parity value. It the verification is negative, and parity verification is continued sequentially starting from the first row until a row generating a negative verification result is identified while sustaining the current row address. If a discrete tail bit is '1', it is rewritten to '0'.