SILANIZING APPARATUS AND SILANIZING METHOD

摘要

PROBLEM TO BE SOLVED: To make it possible to form a silanizing layer to a nearly uniform thickness only on the surface layer of a thin-film by silanizing only the surface layer of the thin film without accelerating the unnecessary silanization in the depth direction of the thin film when the thin film is heated. SOLUTION: The silanizing apparatus for silanizing the thin film 33 formed on a wafer 30 by supplying a silanizing agent to the surface of the thin film 33 is provided with an energy ray source 21 which oscillates an energy ray L for heating only the surface layer of the thin film 33. The energy ray source 21 pulse oscillates the energy ray L. The energy ray L is preferably a ray having a wavelength to heat the surface of the thin film 33 in a state of maintaining the chemical compsn. of the thin film 33. The silanizing apparatus 1 is provided with a cooled stage 12 on which the wafer 30 is placed.