ELECTRON BEAM RESIST AND METHOD FOR FORMING RESIST PATTERN AND FINE PATTERN

摘要

PROBLEM TO BE SOLVED: To obtain an electron beam resist resistant to dry etching and high in resolution and sensitivity and applicable by spin coating by using a C60 fullerene derivative having a specified structural formula. SOLUTION: This C60 fullerene derivative to be used among the fullerane derivatives is represented by one of formulae I-III and the like and a thin film made of this fullerene derivative is exposed to electron beams. When irradiation with electron beams exceeds a prescribed limit of 10<-3> C/cm<2> , the solubility of the derivative in a developing solution abruptly drops at the time of development, thus permitting the resist pattern to be formed advantageously. The thin film using this fullerene derivative exhibits high sensitivity as described above.