发明名称 HIGH FREQUENCY SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To make the high frequency characteristic good, by providing conductive through-holes for connecting a first ground to a second ground at regions having specified lengths or less from signal lines connecting signal bumps of a high frequency semiconductor chip and specified lengths or less from peripheral bumps. SOLUTION: A high frequency circuit 12 is formed, including a front ground, on one surface of a wiring board 10, a back ground 16 is formed on the other surface, a high frequency semiconductor chip 30 having a chip high frequency circuit 32 is formed on a chip mounting area of the front ground 14, peripheral bumps 41 including ground bumps are provided with intervals of specified length or less at a chip periphery so as to surround the semiconductor chip 30, and conductive through-holes 22 for connecting the front ground 14 to the back ground 16 are formed at regions having specified lengths or less from signal lines 14 connecting signal bumps of the high frequency semiconductor chip 30 and specified lengths or less from the peripheral bumps 41.
申请公布号 JPH11260966(A) 申请公布日期 1999.09.24
申请号 JP19980058192 申请日期 1998.03.10
申请人 SHARP CORP 发明人 KAKIMOTO NORIKO;SUEMATSU EIJI
分类号 H01L23/12;H01L23/66;H01P3/02 主分类号 H01L23/12
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