发明名称 MANUFACTURE OF ARRAY SUBSTRATE FOR DISPLAY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide the manufacturing method of an array substrate for a display device for not generating defects even when wet etching is performed in the process of forming a picture element electrode. SOLUTION: A scanning line 111, first insulation films 115 and 117, a semiconductor film 120, a thin film transistor 112 provided with a source electrode 126b and a drain electrode 126a electrically connected to the semiconductor film 120, a signal line 110 led out from the drain electrode 126a and made almost orthogonal to the scanning line 111 and the picture element electrode 131 electrically connected to the source electrode 126b are provided. For the scanning line 111, the Al-Nd alloy film 1110 of film thickness 300 nm and the Mo film 1110 of the film thickness 50 nm on it are laminated and deposited, then the first insulation films 115 and 117 are formed by a CVD method at the substrate temperature of 350 deg.C and further, the picture element electrode 131 is etched by a liquid mixture containing at least HBr, HI or oxalic acid. Thus, by the lamination of an Al alloy and the Mo film, Al is not corroded by etching and a yield is not lowered in array substrate formation.</p>
申请公布号 JPH11259016(A) 申请公布日期 1999.09.24
申请号 JP19980063252 申请日期 1998.03.13
申请人 TOSHIBA CORP 发明人 DOJIRO MASAYUKI;KUBO AKIRA
分类号 G09F9/30;G02F1/1343;G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G09F9/30;G02F1/134 主分类号 G09F9/30
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