METHOD FOR MAKING APPROPRIATE ETCHING DEPTH BY ANISOTROPIC ETCHING IN PRODUCTION PROCESS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED BY APPLYING THE METHOD,申请号JP19980076444-传众专利搜索

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发明名称	METHOD FOR MAKING APPROPRIATE ETCHING DEPTH BY ANISOTROPIC ETCHING IN PRODUCTION PROCESS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED BY APPLYING THE METHOD
摘要
申请公布号	JPH11258266(A)	申请公布日期	1999.09.24
申请号	JP19980076444	申请日期	1998.03.11
申请人	OMRON CORP	发明人	FURUMURA YOSHIYUKI
分类号	H01L21/306;B81C1/00;G01L1/14;G01L9/12;G01P15/125;H01L21/66;H01L29/84;(IPC1-7):G01P15/125	主分类号	H01L21/306
代理机构		代理人
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