| 摘要 |
PROBLEM TO BE SOLVED: To increase the emission output and narrow the full width at half maximum intensity of the emission spectrum by forming an active layer from indium, gallium, and nitrogen and making it into a quantum well structure, and allowing the active layer to make an interband emission. SOLUTION: A semiconductor laminate, constituted of first n-type and p-type clad layers 14, 16 with an active layer 15 interposed between is formed on a substrate 11 through a buffer layer 12 and an n-type contact layer 13. The active layer 15 is constituted of a nitride semiconductor including In, and Ga and is expressed by the formula Inm Aln Ga1-m-n (0<m<1, 0<=n<1, m+n=1). By changing the mole fraction of In, that is, 'm' valve in the formula, the band gap can be so changed that light ranging from ultraviolet through red can be emitted. By forming the active layer 15 into a quantum well structure for causing inter-quantum-level emission of a nitride semiconductor (InGaN), a light-emitting device, whether a LED or LD, of high output can be obtained due to a strain quantum well effect, an exciton emission effect, and the like. |
