| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer in which nearly perfect alignment can be realized between a buffer layer and a group III nitride semiconductor layer of a cubic system structure to be laminated on the buffer layer. SOLUTION: An epitaxial wafer 10 is a laminate which includes a crystalline substrate 1 of a cubic system structure, a buffer layer 2 formed on the substrate 1, the material of the buffer layer being expressed by a formula Bp Gaq As (0<p<=1, p+q=1), and a nitride semiconductor layer 3 of a mainly cubic system structure formed on the buffer layer 2, the material of the layer 3 being expressed by a formula Alx Gay Inz NWM1-w (0<=x, y, z<=1, x+y+z=1, 0<w<=1, where symbol M indicates a group V element other than nitrogen). |
