Semiconductor device with silicon-on-insulator structure

摘要

The semiconductor device includes a substrate on which a circuit is formed. A bonding pad (121) is connected to the electronic circuit. A metal bonding wire (3) is bonded to a region including the bonding pad and to a bonding region (12) which is exposed adjacent to the bonding pad. A diode is formed between the bonding pad and the semiconductor substrate. An Independent claim is also included for a method of manufacturing a semiconductor device.