METHOD FOR APPLYING A DIELECTRIC CAP FILM TO A DIELECTRIC STACK

摘要

There is provided a method for applying a dielectric cap film (24) to a dielectric stack, which is provided on top of metal structures of a semimanufactured chip during production of an IC-device and which comprises a SOG (Spin On Glass) film (12) as top layer, wherein the cap film is produced by a SACVD (Subatmospheric Chemical Vapor Deposition) gap-filling process whereby full planarization of the IMD (Inter Metal Dielectric) stack is achieved as a global as well as a local planarization.