发明名称 |
CAPACITOR IN AN INTEGRATED CIRCUIT |
摘要 |
A capacitor in an integrated semiconductor circuit, comprising a first electrode (6) which is electrically connected to a doped area by means of a connecting structure (7), a second electrode (11), a capacitor dielectric (10) which is arranged between both electrodes and a barrier layer (9). The barrier layer (9) is mainly comprised of Ta-Me-N, whereby Me is an element or combination of several elements from the group of transition metals and/or lanthanides. |
申请公布号 |
WO9948154(A1) |
申请公布日期 |
1999.09.23 |
申请号 |
WO1999DE00655 |
申请日期 |
1999.03.10 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;BRUCHHAUS, RAINER;NAGEL, NICOLAS;PRIMIG, ROBERT;SCHINDLER, GUENTHER |
发明人 |
BRUCHHAUS, RAINER;NAGEL, NICOLAS;PRIMIG, ROBERT;SCHINDLER, GUENTHER |
分类号 |
H01L21/02;H01L21/8242;H01L27/06 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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