发明名称 CAPACITOR IN AN INTEGRATED CIRCUIT
摘要 A capacitor in an integrated semiconductor circuit, comprising a first electrode (6) which is electrically connected to a doped area by means of a connecting structure (7), a second electrode (11), a capacitor dielectric (10) which is arranged between both electrodes and a barrier layer (9). The barrier layer (9) is mainly comprised of Ta-Me-N, whereby Me is an element or combination of several elements from the group of transition metals and/or lanthanides.
申请公布号 WO9948154(A1) 申请公布日期 1999.09.23
申请号 WO1999DE00655 申请日期 1999.03.10
申请人 SIEMENS AKTIENGESELLSCHAFT;BRUCHHAUS, RAINER;NAGEL, NICOLAS;PRIMIG, ROBERT;SCHINDLER, GUENTHER 发明人 BRUCHHAUS, RAINER;NAGEL, NICOLAS;PRIMIG, ROBERT;SCHINDLER, GUENTHER
分类号 H01L21/02;H01L21/8242;H01L27/06 主分类号 H01L21/02
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