Semiconductor device production process for producing a laser cut device with a rear plated heat sink

摘要

A semiconductor device production process comprises forming metal-covered front and back face separation trenches, the back face trench being formed by etching using a plated heat sink as mask. A semiconductor device production process comprises: (1) applying a first metal layer to cover the surface of a first separation trench in a semiconductor substrate surface; (2) thinning the substrate from its back face; (3) forming a second separation trench at the back face of the first trench to expose the first metal layer and covering the second trench surface with a second metal layer; and (4) laser cutting the first and second metal layers from the first metal layer side. The novelty is that the second trench is formed by etching using a plated heat sink formed in a back face region beyond the back face surface of the first trench, the two metal layers having a reflection capacity of <= 80% with respect to laser light. An Independent claim is also included for a device produced by the above process.