发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To avoid transfer troubles such as wafer cracks, when a wafer is attracted to a stage by charges. SOLUTION: A knock-up jig 3 is made conductive and connected to the ground to escape electric charges on a wafer 1, when the wafer contacts and the shape is round at the top end face not so as to damage to wafer. The charges escape to the ground at charging, and consequently the wafer attraction can be avoided and as a result in that the transport troubles such as wafer cracks can be avoided.</p>
申请公布号 JPH11260894(A) 申请公布日期 1999.09.24
申请号 JP19980059987 申请日期 1998.03.11
申请人 SEIKO EPSON CORP 发明人 NISHIMOTO TOSHIYUKI
分类号 H01L21/683;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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