METHOD FOR CLEANING ELECTROSTATIC CHUCKING ELECTRODE

摘要

PROBLEM TO BE SOLVED: To provide a plasma cleaning method, which is suitable for removing a reaction product adheres on an electrode and which is mainly composed of C, Al and Si, without producing cuts in the insulating film of an electrostatic chucking electrode. SOLUTION: Plasma cleaning using gas containing BCl3 is continuously executed in a second step by following the plasma cleaning of a reaction product adhered on the insulating film 11 of the electrostatic chucking electrode 13 of a plasma processor in a first step, using O2 gas in a state in which a wafer 1 is not installed. High frequency voltage applied to the electrostatic chucking electrode 13 is set to be not more than 150 V during the plasma cleaning of the second step.