| 摘要 |
In an electronic high-frequency switch, comprising a field-effect transistor as the switching element, the size of the gate voltage may be switched between at least two values (-5.5 V and -8 V), according to the desired linearity or switching speed. The switching device for the gate voltage is preferably coupled to a correction device in which different correcting values for the different gate voltage values corresponding to different correcting values for transmission or reflection by the high frequency switch are stored.
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