MAGNETIC MEMORY DEVICE USING MAGNETIC DOMAIN DRAGGING

摘要

A magnetic memory device using a magnetic domain dragging is provided to increase data storage capacity by storing data of plural states at a position of a magnetic domain wall formed on a free layer. A memory region(30) includes a free layer(33), a reference layer(31), and a non-magnetic layer(32). The free layer has a plurality of continuous sectors on which a magnetic domain wall(DW) is formed. The reference layer is formed to be corresponded to the sector and has one fixed magnetization direction. The non-magnetic layer is formed between the free layer and the reference layer. The memory region further includes a magnetic domain wall stopper formed on each interface of the respective sector. The magnetic domain wall stopper stops the magnetic domain wall. An input unit is electrically connected to an end of the free layer to input a dragging signal for a magnetic domain dragging. A sensing unit senses a current passing the memory region.