Silicon single crystal and method for producing the same

摘要

There are disclosed a method for producing a silicon single crystal by growing the silicon single crystal based on a magnetic field applied Czochralski method, characterized in that the single crystal is grown at a high growth rate satisfying the equation: Vave >/= 120/r where Vave denotes an average crystal growth rate Ämm/minÜ, and r denotes a radius of the single crystal ÄmmÜ, and a rotation number R ÄrpmÜ of the single crystal in growing satisfies the equation: R