Protection structure for high-voltage integrated electronic devices

摘要

The protection structure (1) has a plurality of protection regions (2) extending along closed lines arranged inside each other. Each intermediate protection region (2) is tangent to two different adjacent protection regions (2), at different areas (3), such as to form a connection in series with them. The protection structure (1) can be of resistive material, such as to form a series of resistors, or it can include doped portions alternately of P- and N-type, such as to form a plurality of anti-series arranged diodes. The structure can be made of polycrystalline silicon extending on the substrate surface, or can be integrated (implanted or diffused) inside the substrate.